Yahyazadeh R, Hashempour Z. Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs. IJIE [Internet]. 2021 Nov. 23 [cited 2026 Aug. 7];13(5):276-87. Available from: https://journal.uthm.edu.my/index.php/ijie/article/view/6713